| 引用本文： |
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李福宾,林硕,李建功,沈晓明.GaN肖特基紫外探测器的电流输运研究[J].广西科学,2009,16(2):158-160. [点击复制]
- LI Fu-bin,LIN Shuo,LI Jian-gong,SHEN Xiao-ming.Current Transport of GaN Schottky UV Detectors[J].Guangxi Sciences,2009,16(2):158-160. [点击复制]
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| 摘要: |
| 为了探明GaN肖特基紫外探测器漏电流问题,提高探测器的性能,在已有的各种电流输运模型的基础上,把宽禁带的GaN基半导体材料(Eg>3.4eV)看作绝缘体,用空间电荷限制电流理论(SCLC)分析由金属有机物化学气相沉积法(MOCVD)生长的金属-GaN肖特基紫外探测器样品的I-V和I-V-T曲线。结果表明,SCLC机制控制的电流成分占主导地位,对于两个转换电压V1、V2,在V<V1的区域电流电压遵循欧姆定律,在V1 < V < V2的区域遵循幂指数规律I∝Vm,在V>V2的区域电流电压遵循SCLC平方率。 |
| 关键词: GaN 肖特基 紫外探测器 电流输运 |
| DOI： |
| 投稿时间：2008-11-17修订日期：2008-12-18 |
| 基金项目:广西科学基金项目(No.0731012)资助 |
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| Current Transport of GaN Schottky UV Detectors |
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LI Fu-bin, LIN Shuo, LI Jian-gong, SHEN Xiao-ming
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| (School of Physics Science and Engineering Technology, Guangxi University, Nanning, Guangxi, 530004, China) |
| Abstract: |
| The anomalously large leakage current of GaN Schottky UV detectors will impact their performances.In this paper,we analyzed the I-V and I-V-T curves of the M-GaN Sckottky UV detector samples grown by metalorganic chemical vapor deposition (MOCVD).The space-charge-limited current (SCLC) is considered as the dominating current transport mechanism.Unlike in the case of thermal emission mechanism,the current-voltage relationship follows Ohm’s law while V < V1,it follows the power-law while V1 < V < V2,however,it changes to be the SCLC rule while V > V2.The reason is analyzed in this paper. |
| Key words: GaN schottky UV detectors current transport |
