ZnO纳米线的制备及其影响因素

Preparation and Influencing Factors of ZnO Nanowires

关键词:  ZnO纳米线  ITO导电玻璃  种子层结晶性  PEI

Key words:  ZnO nanowires  ITO conductive glasses  crystal structure of seed layer  PEI

摘要:

[目的]采用化学浴沉积法在ITO导电玻璃衬底上制备ZnO纳米线。[方法]研究种子层结晶性、PEI浓度对ZnO纳米线生长的影响,并用SEM、XRD、AFM对其形貌、晶体结构等进行表征。[结果]衬底温度为200℃时生长的ZnO纳米线垂直排列呈六角纤锌矿结构;PEI浓度为4.5 mmol/L时,ZnO纳米线的长径比最高,达20.56。[结论]制备的ZnO纳米线取向良好、结构尺寸均匀、长径比高。

Abstract:

[Objective] In this paper, ZnO nanowires were synthesized on ITO conductive glasses by chemical bath deposition.[Methods] The parameters of processing ZnO nanowires were systematically investigated, including the crystallinity of ZnO seed layers, PEI concentration. The morphology and crystal structure of ZnO nanowires were characterized by SEM, XRD, AFM.[Results] ZnO nanowires were vertically grown on ITO substrate and hexagonal wurtzite structure when the temperature was 200℃.Moreover, we obtained ZnO nanowires with aspect ratio of 20.56 at the PEI concentration of 4.5 mmol/L.[Conclusion] The prepared ZnO nanowires have good orientation, uniform size and high aspect ratio.